Investigation of Temperature Influence on Physical Parameters of Semiconductor -Metoxo(Cuprum(II), Bismut(III)) Acetylacetonate

Abstract

Heterrometal complex compounds have a semiconductor type of conductivity, the operating temperature range of which depends on the nature of the central metal atoms, bridge ligands, stereochemistry of the metal-ligand environment, and can be used as a semiconductor material.

The method of synthesis of heterometal μ-methoxone (kuprum (II), bismuth (III)) acetylacetonate (I) has been developed.

An acetylacetonate of the composition Cu₃Bi (AA ₄ (OCH₃) ₅, where HAA = H₃C–C (O)–CH₂–C (O)–CH₃, is synthesized in the semiconductor material μ-methoxy (cupram (II), bismuth (III). The purpose of the study is to study the influence of temperature on the physical parameters of the synthesized semiconductor material. Experimental measurements and theoretical calculations of dependencies of the basic physical parameters of this material on temperature and magnetic field are carried out. Thus, in the temperature range from 273 K to 493 K, the specific resistance decreased from 1,35⋅10¹⁴ Om to 1,5⋅10^–4 Om; the resistance of the sample, in the dimensions 0,5×0,5×0,15 mm, at 273 K is equal to 9,01⋅10¹⁷ Оm, and at 493 К — 1 Оm; the concentration of charge carriers at a temperature of 273 K is 4,9 ⋅10¹⁷ m^-3, at 323 K — 8,2⋅10²³ m^-3, whereas at a temperature of 493 K the carrier concentration is already 4,4⋅10³⁵ m^-3; the current value at a voltage of 1 V and a temperature of 273 K — I = 1,1⋅10^–18 A, the maximum value of current is achieved at a temperature of 493 K — I = 0,99 A. The dependence of the Hallfield field intensity in the middle of the semiconductor on the induction of a magnetic field at different temperatures, and Voltage Volts show that the given values are not temperature dependent and coincide in one line. In the range from 0 to 200 mT, the Hall effect increases from 1,12⋅10^–11 to 2,24⋅10^–10 V, from 200 to 600 mT — from 2,24⋅10^–10 V to 6,73⋅10^–10 V and from 600 mT to 1000 mT — Hall's voltage rises from 6,73⋅10^–10 to 1,12⋅10^–9 V. It is proved that this material is a semiconductor, and with the carriers of the charge of both signs.