Radioelectronics and radioelectronic equipment manufacturing
Evaluation of the switch parameters of the memory cell based on the amorphous semiconductor material
Abstract
The problems of calculating and qualitative assessment of switch delay time of memory cell based on amorphous semiconductor depended on temperature and traps capture concentration are discussed. Based on the obtained formulas the graphs of delay time on temperature for different values of the ionization threshold and graphs of the delay time on the traps capture concentration for different values of hole mobility are constructed and analyzed.
How to Cite
[1]
“Evaluation of the switch parameters of the memory cell based on the amorphous semiconductor material”, Вісник ВПІ, no. 5, pp. 115–117, Oct. 2013, Accessed: Oct. 06, 2026. Available: https://visnyk.vntu.edu.ua/index.php/visnyk/article/view/1043
