Optimization of Regimes of Formation of Silver Based Injecting Barrier Transitions to Gallium Arsenide

Abstract

The processes that occur during metals interaction with semiconductor A₃B₅ compounds are the subject of intensive research, which confirmed the complexity of processes occurring in contacts at the phase separation boundary. The producing conditions and the thermal treatment contact Ag/n-n⁺GaAs regimes have been researched. The substrate temperature; the annealing temperature and annealing time; the rise and cooling annealing temperature rate are determined to obtain a barrier transition Ag/n-n⁺GaAs with a barrier height of 0,98 V. It is assumed that the potential barrier height increase is associated with the improved films adhesion, as well as the beginning of mutual diffusion between silver, gallium and arsenic, during contact formation.