Radioelectronics and radioelectronic equipment manufacturing
Determination of physical model of double-gatefield-effect Shotky transistor
Keywords
shotky transistor
physical model
steady amplification
Abstract
The paper considers the method intended for determination of equivalent circuit parameters of active region of single-gate MESFET (MESFET1) crystal. The method is based on the results of measurement of maximal steady amplification factor at different schemes of its turning on, enabling to decrease the influence of part of case elements and passive area of the crystal.
How to Cite
[1]
“Determination of physical model of double-gatefield-effect Shotky transistor”, Вісник ВПІ, no. 4, pp. 93–96, Nov. 2010, Accessed: Oct. 06, 2026. Available: https://visnyk.vntu.edu.ua/index.php/visnyk/article/view/83
