Radioelectronics and radioelectronic equipment manufacturing
Elaboration of radiomeasuring microelectronic transformers of temperature on the basis of structure metal-ferroelectric-semiconductor
Keywords
ferroelectric thin films
sol-gel process
radiomeasuring microelectronic transformers of temperature
metal-ferroelectric-semiconductor structure
transistors structures with negative resistance
Abstract
In the paper modern technologies of ferroelectric| thin films, methods of construction of radiomeasuring | microelectronic transformers of temperature are analyzed. A new method of measuring of temperature on the basis of combined ferroelectric thin | films and transistors structures with negative resistance was offered and electric circuits of radiomeasuring | microelectronic transformers of temperature on the basis of structure metal-ferroelectric-semiconductor were developed.
How to Cite
[1]
“Elaboration of radiomeasuring microelectronic transformers of temperature on the basis of structure metal-ferroelectric-semiconductor”, Вісник ВПІ, no. 3, pp. 94–97, Nov. 2010, Accessed: Oct. 05, 2026. Available: https://visnyk.vntu.edu.ua/index.php/visnyk/article/view/607
