Radioelectronics and radioelectronic equipment manufacturing
The photoreactive effect in the field-effect transistor structures with bilateral illumination of the channel
Keywords
photoreactive effect
field-effect transistor
complete resistance
optical radiation
Abstract
The analysis of photoreactive effect in the field-effect transistor structures with bilateral illumination of the channel on the basis of the solution of equation of continuity of charge transmitters in the channel of transistor under the influence of light is conducted. It enabled the possibility to calculate in theoretically complete resistance of the channel and obtain analytical dependence of its constituents on power of optical radiation.
How to Cite
[1]
“The photoreactive effect in the field-effect transistor structures with bilateral illumination of the channel”, Вісник ВПІ, no. 4, pp. 92–98, Nov. 2010, Accessed: Oct. 05, 2026. Available: https://visnyk.vntu.edu.ua/index.php/visnyk/article/view/626
