Radioelectronics and radioelectronic equipment manufacturing
The analysis of impedance properties of combined light-reception optonegatron
Keywords
optonegatron
phototransistor
invariant stability coefficient
impedance
Abstract
The mathematical model of combined optonegatron on the bipolar phototransistor base is offered, the research of influence of intensity of optical radiation on the basic impedance characteristics of combined optonegatrons in the range of frequencies where they are potential - unstable is carried out.
How to Cite
[1]
“The analysis of impedance properties of combined light-reception optonegatron”, Вісник ВПІ, no. 5, pp. 155–158, Nov. 2010, Accessed: Oct. 03, 2026. Available: https://visnyk.vntu.edu.ua/index.php/visnyk/article/view/247
