Active ultrahigh frequency filters on the basis of dual-gate FET

Abstract

There had been suggested the new method for the realization of the semiconductor inductor based on the dual-gate FET and synthesized on its basis the circuits of the reciprocal and nonreciprocal active ultrahigh filters. There had been given the results of the mathematic simulation of the developed active filters, which demonstrate, that the developed active inductivity allows to realize the ultrahigh frequency filters in the integral kind.