Process for trichlorosilane (TCS) hydrogen recovery implementation

Authors

  • Yu. V. Rekov Zaporozhye State Engineering Academy
  • I. F. Chervonyi Zaporozhye State Engineering Academy

Abstract

The results of theoretical studies on the pre-heated rod-substrates to generate their own carriers and provide the necessary conductivity of silicon in the production of high-purity polycrystalline silicon are suggested in the paper. The usage of alloy rod-substrates for the production of polycrystalline silicon with the given level of concentration of the dopant is considered.

Author Biographies

Yu. V. Rekov, Zaporozhye State Engineering Academy

PhD Student Department of non-ferrous metals,

I. F. Chervonyi, Zaporozhye State Engineering Academy

Chair. Department of non-ferrous metals,

References

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How to Cite

[1]
Y. V. Rekov and I. F. Chervonyi, “Process for trichlorosilane (TCS) hydrogen recovery implementation”, Вісник ВПІ, no. 5, pp. 26–31, Oct. 2013.

Issue

No 5 (2013)

Section

Ecology, ecological cybernetics and chemical technologies

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