Temperature-to-Frequency Converter Based on a Nanocomposite Semiconductor Material
DOI:
https://doi.org/10.31649/1997-9266-2025-183-6-180-185Keywords:
temperature converter, bipolar transistor, field-effect transistor, nanocomposite materialAbstract
The study presents the results of investigating a new heterometallic complex compound — tetrakis-µ₃-(methoxo)(methanol)-pentakis(acetylacetonato)(tricopper(II), neodymium(III)) methanol (I) of the composition [Cu₃Nd(AA)₅(OCH₃)₄CH₃OH]∙CH₃OH, where HAA = H₃C–C(O)–CH₂–C(O)–CH₃. For the synthesized compound, elemental analysis as well as magnetochemical, IR-spectroscopic, and thermogravimetric studies were performed. Based on the experimental results, it was confirmed that the composition of compound (I) corresponds to the given chemical formula.
For this complex, the molar mass (985.5 g/mol) was calculated, along with the number of valence electrons in a molecule (270), the mass of a single molecule, and the total number of molecules in a cylindrical sample with a mass of 0.125 g and a volume of 17.74∙10–9 m3. Additionally, the total number of valence electrons in the sample was determined.
It was shown that in the temperature range of 303–423 K, the specific resistance of the pressed powder decreases from 2∙1012 to 5∙104 Ω∙cm, which confirms the semiconductor nature of the studied substance. The band gap width was found to be 1.61 eV. The performed calculations demonstrated that the obtained compound exhibits semiconductor behavior with bipolar conductivity, meaning that charge transport occurs through both electrons and holes.
To evaluate the practical applicability of the compound as a temperature-sensitive element, the investigated material was additionally pressed into the form of an SMD thermistor of type 0402 with geometric dimensions of (1×0,5×0,5)∙10–3 m.
Mathematical model of a temperature-to-frequency converter based on the nanocomposite material tetrakis-µ₃-(methoxo)(methanol)-pentakis(acetylacetonato)(tricopper(II), neodymium(III)) methanol (I) with an active inductive element was developed. The structure of the device includes three bipolar and MOS transistors. To determine the conversion function, a system of Kirchhoff equations was solved, establishing the dependence of the generation frequency on temperature and obtaining an analytical expression for the conversion function.
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