The analysis of impedance properties of combined light-reception optonegatron
Keywords:
optonegatron, phototransistor, invariant stability coefficient, impedanceAbstract
The mathematical model of combined optonegatron on the bipolar phototransistor base is offered, the research of influence of intensity of optical radiation on the basic impedance characteristics of combined optonegatrons in the range of frequencies where they are potential - unstable is carried out.Downloads
-
PDF (Українська)
Downloads: 30
Abstract views: 120
Published
2010-11-12
How to Cite
[1]
M. A. Filyniuk and S. Y. Shveikina, “The analysis of impedance properties of combined light-reception optonegatron”, Вісник ВПІ, no. 5, pp. 155–158, Nov. 2010.
Issue
Section
Radioelectronics and radioelectronic equipment manufacturing
License
Authors who publish with this journal agree to the following terms:
- Authors retain copyright and grant the journal right of first publication.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
