Elaboration of radiomeasuring microelectronic transformers of temperature on the basis of structure metal-ferroelectric-semiconductor

Authors

  • V. S. Osadchuk
  • O. V. Osadchuk
  • S. V. Baraban
  • O. M. Ilchenko

Keywords:

ferroelectric thin films, sol-gel process, radiomeasuring microelectronic transformers of temperature, metal-ferroelectric-semiconductor structure, transistors structures with negative resistance

Abstract

In the paper modern technologies of ferroelectric| thin films, methods of construction of radiomeasuring | microelectronic transformers of temperature are analyzed. A new method of measuring of temperature on the basis of combined ferroelectric thin | films and transistors structures with negative resistance was offered and electric circuits of radiomeasuring | microelectronic transformers of temperature on the basis of structure metal-ferroelectric-semiconductor were developed.

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Published

2010-11-12

How to Cite

[1]
V. S. Osadchuk, O. V. Osadchuk, S. V. Baraban, and O. M. Ilchenko, “Elaboration of radiomeasuring microelectronic transformers of temperature on the basis of structure metal-ferroelectric-semiconductor”, Вісник ВПІ, no. 3, pp. 94–97, Nov. 2010.

Issue

No 3 (2008)

Section

Radioelectronics and radioelectronic equipment manufacturing

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