Elaboration of radiomeasuring microelectronic transformers of temperature on the basis of structure metal-ferroelectric-semiconductor
Keywords:
ferroelectric thin films, sol-gel process, radiomeasuring microelectronic transformers of temperature, metal-ferroelectric-semiconductor structure, transistors structures with negative resistanceAbstract
In the paper modern technologies of ferroelectric| thin films, methods of construction of radiomeasuring | microelectronic transformers of temperature are analyzed. A new method of measuring of temperature on the basis of combined ferroelectric thin | films and transistors structures with negative resistance was offered and electric circuits of radiomeasuring | microelectronic transformers of temperature on the basis of structure metal-ferroelectric-semiconductor were developed.Downloads
-
PDF (Українська)
Downloads: 30
Abstract views: 171
Published
2010-11-12
How to Cite
[1]
V. S. Osadchuk, O. V. Osadchuk, S. V. Baraban, and O. M. Ilchenko, “Elaboration of radiomeasuring microelectronic transformers of temperature on the basis of structure metal-ferroelectric-semiconductor”, Вісник ВПІ, no. 3, pp. 94–97, Nov. 2010.
Issue
Section
Radioelectronics and radioelectronic equipment manufacturing
License
Authors who publish with this journal agree to the following terms:
- Authors retain copyright and grant the journal right of first publication.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
